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采用电阻率为4.8.cm的p型硅片和10.cm的n型硅片,通过高温扩散法制备出了Fe掺杂的补偿硅材料。在室温避光条件下,测量样品电阻率ρ,并用XRD对扩散后的样品进行分析,研究了Fe掺杂对不同导电类型硅材料电阻率的影响。结果表明:相对于n型硅材料,深能级杂质Fe掺杂对p型硅材料电阻率的影响更大,其Fe掺杂p型硅材料电阻率远大于Fe掺杂n型硅材料;当p型硅表面Fe扩散源浓度为1.74×10–5mol/cm2时,在1 200℃下扩散1 h后,材料具有最大电阻率7 246.cm。
Fe-doped compensating silicon material was prepared by high temperature diffusion method using p-type silicon wafer with resistivity of 4.8.cm and n-type silicon wafer of 10.cm. The resistivity ρ of the samples was measured under dark conditions at room temperature, and the samples after diffusion were analyzed by XRD. The effects of Fe doping on the resistivity of different conductive silicon materials were investigated. The results show that the deep-level impurity Fe doping has a greater influence on the resistivity of the p-type silicon than the n-type silicon, and the resistivity of the p-type silicon doped with Fe is much larger than that of the n-type silicon doped with Fe. When the concentration of Fe diffusion source on the surface of p-type silicon is 1.74 × 10-5mol / cm2, the material has the maximum resistivity of 7246.cm after diffusion at 1 200 ℃ for 1 h.