论文部分内容阅读
Due to ineffectiveness of routine IR-absorption method for determinahon of intershtial oxygen in heavilydoped silicon, a “peak-height’ method has been dcveloped. The phosphorus-doped CZ-Si with n=(7.l～l2)×10~17cm~(-3) was taken as sample for characterization. The calculation results at 300 K and 10 K were ptesentedin detail. The”peak-height“ method is much simpler than ”short-baseline“ and ”curved-baseline“ methods.
Due to ineffectiveness of routine IR-absorption method for determinah of intershoxy oxygen in heavilydoped silicon, a ”peak-height“ method has been dcveloped. The phosphorus- doped CZ- Si with n = (7.l ~ l2) The calculation results at 300 K and 10 K were ptesented in detail. The ”peak-height “ method is much simpler than ”short-baseline “ and ”curved -baseline "methods.