使用 5 14 .5 nm Ar+激光检测了 Ge覆盖多孔硅结构的光致发光谱 (PL) ,观察到峰位 2 .2 5 e V,半峰宽约 0 .1e V的一个新的桔绿发光峰 .随着覆盖 Ge薄膜的加厚 ,这个桔绿发光峰的峰位保持不变 ,但发光强度显著下降 .实验和分析结果表明 ,该桔绿发光峰源于多孔硅和嵌于其孔中的 Ge纳米晶粒两者界面中的 Ge相关缺陷 Photoluminescence spectra (PL) of Ge-covered porous silicon structures were examined using a 5 14 .5 nm Ar + laser and a new orange-green luminescence was observed with a peak at 2.55 eV and a full width at half maximum of 0.1eV Peak.With the thicker Ge film thicker, the orange green peak remained unchanged, but the luminous intensity decreased significantly.Experimental and analytical results show that the orange green light emission peak originates in porous silicon and embedded in the hole Ge-related defects in the interface between the Ge nanocrystals