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采用射频磁控溅射方法在石英玻璃基片上制备ITO薄膜,结合薄膜面电阻和微观结构,采用红外、紫外光谱特征分析薄膜的导电机理。结果表明:在相同氧分压下随温度升高紫外吸收波长向短波方向移动,光学带隙展宽,红外等离子共振吸收波长向短波方向移动;随氧分压增加紫外吸收波长明显向长波方向移动,光学带隙变窄,红外等离子共振吸收波长向长波方向移动;根据Burstein-Moss移动理论及XRD、AFM结果,说明温度升高改善ITO薄膜结晶程度,提高Sn掺杂效率,载流子浓度增加;相同温度条件下随氧分压的增加使氧空位减少,载流子减少,并且氧分压的影响更为显著。
ITO films were prepared on quartz glass substrates by radio frequency magnetron sputtering. The surface resistivity and microstructure of the ITO films were investigated. The conductive mechanism of the films was analyzed by infrared and ultraviolet spectroscopy. The results show that the UV absorption wavelength shifts to the short wavelength with the increase of temperature under the same partial pressure of oxygen, the optical bandgap broadens and the absorption wavelength of infrared plasma moves toward the short wavelength. With the increase of partial pressure of oxygen, the UV absorption wavelength obviously moves to the long- According to the Burstein-Moss migration theory and XRD and AFM results, it is shown that the increase of temperature can improve the crystallinity of ITO film, increase the doping efficiency of Sn, and increase the carrier concentration. With the increase of oxygen partial pressure, the oxygen vacancy decreases, the carrier decreases, and the effect of oxygen partial pressure is more significant under the same temperature condition.