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为了克服传统 SOI器件的浮体效应和自热效应 ,采用创新的工艺方法将低剂量局域 SIMOX工艺及传统的CMOS工艺结合 ,实现了 DSOI结构的器件 .测试结果表明 ,该器件消除了传统 SOI器件的浮体效应 ,同时自热效应得到很大的改善 ,提高了可靠性和稳定性 .而原先 SOI器件具备的优点得到了保留
In order to overcome the floating body effect and self-heating effect of the traditional SOI devices, an innovative process method is used to combine the low-dose local SIMOX process with the conventional CMOS process to realize the DSOI structure device. The test results show that the device eliminates the traditional SOI device Floating body effect, while self-heating effect has been greatly improved, improved reliability and stability. The advantages of the original SOI device has been retained