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叙述采用等离子体源离子注入法(PSII),对带有SiC涂层的C纤维增强SiC基(SiC-C/SiC)复合材料进行硼离子注入的工艺研究。通过朗缪尔单探针测量了等离子的密度,对注入剂量进行了估算。对复合材料采用加金属网的工艺,来提高离子注入能量。用俄歇电子能谱检测分析了加金属网与未加金属网样品硼离子的成分深度分布。证明了加金属网工艺可以有效改善不良导体的注入效果。在空气中1300℃的高温条件下进行了氧化实验,实验结果说明对SiC-C/SiC复合材料注入硼有助于提高其抗氧化性能。
The process of implanting boron ions into SiC fiber reinforced SiC matrix (SiC-C / SiC) composites with SiC coating by plasma source ion implantation (PSII) is described. The density of the plasma was measured by a Langmuir single probe and the injected dose was estimated. The use of composite materials plus metal mesh process, to improve ion implantation energy. The Auger electron spectroscopy was used to analyze the component depth distribution of boron ions in the samples with or without metal addition. It is proved that adding a metal mesh process can effectively improve the injection effect of a poor conductor. The oxidation experiment was carried out under the high temperature of 1300 ℃ in air. The experimental results show that the boron injection into the SiC-C / SiC composites can improve the oxidation resistance.