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在国内首次设计并制作了脊波导结构的In(0.53)Ga(0.47)As／In(0.52)Al(0.48)AS多量子阱电吸收型光调制器，并对它的工作特性进行了测试。在3.0V的驱动电压下实现了20dB以上的消光比，光3dB带宽达到了3GHz。对限制光调制器带宽的主要原因进行了分析，结果表明器件电容限制了带宽的提高，这主要是由于SiO2刻蚀液的钻蚀导致SiO2绝缘层厚度减小造成的。改进制作工艺可望大大改善调制器的工作带宽。
The In (0.53) Ga (0.47) As / In (0.52) Al (0.48) AS multiquantum well electroabsorption optical modulator with ridge waveguide structure was designed and fabricated for the first time in China, and its operating characteristics were tested. In the 3.0V drive voltage to achieve more than 20dB extinction ratio, optical 3dB bandwidth reached 3GHz. The main reason for limiting the bandwidth of the optical modulator is analyzed. The results show that the capacitance of the device limits the increase of the bandwidth, which is mainly caused by the decrease of SiO2 insulation thickness caused by the etching of SiO 2 etching solution. Improve the production process is expected to greatly improve the working bandwidth of the modulator.