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计算了InGaAsPSBH激光器的TE0 0 模 ,并利用非傍轴矢量矩理论 ,分析了平行于 p -n结方向上的光学质量因子M 2y 在以往有关M 2 的计算中 ,往往忽略了包层中光场的贡献 ,因此得出M 2 小于 1的结论 当半导体激光器的激活层的尺寸远小于发射波长时 ,大部分光场将渗透到包层中 ,因此 ,包层的光场是不能忽略的 考虑到激活层和包层中的光场对M 2 的影响 ,给出了非傍轴半导体激光M 2 的精确表达式 结果表明 ,My大于 1
The TE0 0 mode of InGaAsPSBH laser was calculated and the non-paraxial vector moment theory was used to analyze the optical quality factor M 2y parallel to the direction of p-n junction. In the past calculation of M 2, the light in the cladding Therefore, it is concluded that M 2 is smaller than 1. When the size of the active layer of the semiconductor laser is much smaller than the emission wavelength, most of the light field will penetrate into the cladding. Therefore, the optical field of the cladding is not negligible The influence of the light field to the active layer and the cladding on M 2 gives the exact expression of the non-paraxial semiconductor laser M 2. The results show that My is greater than 1