By formation of an intermediate semiconductor layer (ISL) with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method (TLM) test patterns is formed on N-wells created by P+ ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρc as low as 4.23×10-5 Ω·cm2 is achieved after annealing in N2 at 800 ℃ for 3 min, which is much lower than that (> 900℃) in the typical SiC metallisation process. The sheet resistance Rsh of the implanted layers is 1.5 kΩ/□. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge+ ion implantations. The formation of an intermediate semiconductor layer (ISL) with a narrow band gap at the metallic contact / SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method (TLM) test patterns is formed on N-wells created by P + ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H- SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρc as low as 4.23 × 10-5 Ω · cm2 was achieved after annealing in N2 at 800 ° C for 3 min, which is much less than that (> 900 ° C) in the typical SiC metallisation process. Rsh of the implanted layers is 1.5 kΩ / □. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge + ion implantations.