TiAl intermetallic compound was synthesized and bonded together with Ti substrate synchronously by using fieldactivated and pressure-assisted synthesis (FAPAS) process.The effect of electric field on the microstructure and growth pattern of the diffusion dissolution layer of TiAl/Ti interface was mainly studied.The microstructure of the diffusion dissolution layer was investigated by optical microscope ( OM ) and scanning electron microscope (SEM).The elements distribution of the diffusion dissolution layer was investigated by energy dispersive spectroscopy (EDS).The results show that a fine and homogeneous grain structure is obtained in sintered TiAl intermetallic compound.Metallurgical bond is formed at the TiAl/Ti interface.The thickness of diffusion dissolution layer between TiAl and Ti changes with conduction time and current density.