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利用提高硅粉薄层温度的方法，使冷等离子体对硅提纯达４Ｎ（９９．９９％）。本文用反应动力学的方法分析提纯机理，建立必要的方程以探讨影响提纯的因素。
Cold plasma was used to purify the silicon by 4 N (99.99%) by increasing the temperature of the thin layer of silica fume. In this paper, the reaction kinetics analysis of the purification mechanism, the establishment of the necessary equations to explore the factors that affect the purification.