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通过溶胶-凝胶旋涂法在石英衬底上制备不同Mg-Al共掺ZnO薄膜,并运用XRD、SEM、UV-VIS和四探针对薄膜性能进行表征。结果表明:掺Mg-Al之后薄膜均具有C轴择优生长,且一定量的Mg-Al掺杂可改善薄膜的结晶性和致密度,当Mg-Al掺杂量比(at%)为2∶1时,薄膜结晶性和致密度达到最佳。UV-VIS结果表明,Mg-Al掺杂后,ZnO薄膜光学透过率均有所提高,当掺杂量比(at%)为2∶1.5时,高达94.44%。Mg-Al掺杂后,薄膜禁带宽度有着明显的增大,在3.276~3.335 eV范围内可实现调控。掺Mg-Al后薄膜的电阻率变小,从5.74×10-2Ω·cm下降到1.88×10-2Ω·cm。
Different Mg-Al codoped ZnO films were prepared by sol-gel spin-coating on quartz substrates. The properties of the films were characterized by XRD, SEM, UV-VIS and four probes. The results show that all the films have the C-axis preferred growth after doped with Mg-Al, and a certain amount of Mg-Al doping can improve the crystallinity and density of the films. When the Mg-Al doping ratio (at%) is 2: 1, the film crystallinity and density to achieve the best. The results of UV-VIS showed that the optical transmittance of ZnO films increased after Mg-Al doping, reaching 94.44% when the doping ratio (at%) was 2: 1.5. After Mg-Al doping, the forbidden band width of the film has obviously increased, and it can be regulated in the range of 3.276 ~ 3.335 eV. The resistivity of the films doped with Mg-Al decreases from 5.74 × 10-2Ω · cm to 1.88 × 10-2Ω · cm.