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用腐蚀剥层并结合阳极氧化染色和磨角阳极氧化染色两种方法测试了半开管扩散InSb器件p-n结的结深.两种测试方法结果基本一致。通过结深,对控制扩散条件和其它工艺条件用于半开管扩散法制作16元、42元InSb探测器提供了一个依据.
The junction depth of the p-n junction in the semi-open-tube diffused InSb device was tested by two methods of anodic stripping and anodic oxidation and anodic trimming. The results of the two methods were basically the same. Through the junction depth, the control of diffusion conditions and other conditions for the semi-open tube diffusion method for the production of 16 yuan, 42 yuan InSb detector provides a basis.