采用双靶共溅射方法制备了微量B掺杂的Ti薄膜样品,利用X射线光电子能谱、扫描电子显微镜和X射线衍射仪对样品的掺杂原子浓度、表面形貌、晶型结构、晶粒尺寸和应力进行了分析表征.研究表明:掺杂后的Ti薄膜晶粒得到明显细化,并随着掺杂浓度的增大,薄膜的晶粒尺寸呈减小趋势,当掺杂浓度为5.50 at%时,Ti薄膜晶粒尺寸减小为1.3 nm,呈现出致密的柱状结构.B掺杂后的Ti薄膜应力由压应力转变为张应力. A small amount of B-doped Ti thin film was prepared by double-target co-sputtering method. X-ray photoelectron spectroscopy, scanning electron microscopy and X-ray diffractometry were used to analyze the sample’s doping atomic concentration, surface morphology, Particle size and stress were analyzed and characterized.The results show that the grain size of the doped Ti thin film is obviously refined and the grain size of the thin film decreases with the increase of the doping concentration, At 5.50 at%, the grain size of Ti thin film decreases to 1.3 nm, showing a dense columnar structure. The stress of Ti-doped Ti film changes from compressive stress to tensile stress.