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以多壁碳纳米管(MWCNTs)为导电填料、疏水纳米二氧化硅(SiO2)为非导电填料,填充不相容聚甲基丙烯酸甲酯(PMMA)/聚苯乙烯(PS)(1/1,V/V)共混物,制备(PMMA/SiO2)/(PS/MWCNTs)四元导电高分子复合材料(CPC),研究其导电逾渗与动态流变行为,并与PMMA/(PS/MWCNTs)三元CPC进行对比.发现三元、四元CPC具有类似的导电逾渗行为,且逾渗阈值显著低于PS/MWCNTs二元CPC.在四元CPC中,SiO2粒子可细化相区尺寸,提高熔体模量,但不影响熔体热处理过程中的依时性动态导电逾渗行为.MWCNTs与SiO2均显著影响熔体热处理中的依时性模量逾渗行为,分别缩短、延长四元CPC相粗化起始时间,但均延长相粗化时间区间.
Multi-walled carbon nanotubes (MWCNTs) were used as conductive filler and hydrophobic nano-SiO2 was used as non-conductive filler to fill incompatible Polymethylmethacrylate (PMMA) / Polystyrene (1/1 (V / V) blends, the percolation conductive and dynamic rheological behavior of (PMMA / (PS / MWCNTs) MWCNTs) ternary CPC.It is found that ternary and quaternary CPC have the similar conductive percolation behavior, and the percolation threshold is significantly lower than that of PS / MWCNTs binary CPC.In the quaternary CPC, SiO2 particles can be refined phase Size, and increase the melt modulus, but does not affect the time-dependent dynamic conductivity percolation during the melt heat treatment.MWCNTs and SiO2 all significantly affect the time-dependent percolation behavior of the melt, which are shortened and lengthened respectively Quaternary CPC coarsening start time, but are extended phase coarsening time interval.