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本文建立了一个适用于描述离子束增强沉积(Ion Beam Enhanced Deposition,即IBED)过程的Monte-Carlo计算机模拟程序。程序由离子注入计算和蒸发沉积计算两大部分组成。离子注入计算以二体碰撞近似为基础,以随机固体为靶模型,对入射离子和所有反冲原子的力学运动进行跟踪。程序中考虑了沉积原子对靶室中某些残余气体分子的吸附;还表达了靶的组份及密度在IBED过程中的不断变化,从而实现了靶的动态化。该程序可以提供IBED薄膜组份的深度分布、界面混合以及能量沉积等信息。计算结果表明,在IBED氮化钛薄膜中,Ti沉积速率对薄膜组份有很大影响。当沉积速率较低时,薄膜组份基本与注入离子和沉积原子的到达率比(N/Ti)无关。膜与基体间的混合层厚度随离子原子到达率比(N/Ti)增加而增加。计算结果与实验测试结果符合很好。
This paper establishes a Monte-Carlo computer simulation program suitable for describing Ion Beam Enhanced Deposition (IBED) process. The program consists of ion implantation calculation and evaporation deposition calculation of two major components. Ion Implantation Calculation Based on the two-body collision approximation, the stochastic solid is used as a target model to track the mechanical motion of incident ions and all recoil atoms. The procedure takes into account the adsorption of some residual gas molecules in the target chamber by the depositional atoms, and also expresses the constant changes in the composition and density of the target during the IBED process, thus achieving the target dynamic. This program provides information on the depth profile, interfacial mixing and energy deposition of IBED film components. The calculated results show that the Ti deposition rate has a great influence on the thin film composition in IBED TiN films. When the deposition rate is low, the film composition is essentially independent of the arrival ratio (N / Ti) of implanted ions and deposited atoms. The thickness of the mixed layer between the film and the matrix increases as the ion-atom arrival ratio (N / Ti) increases. The calculated results are in good agreement with the experimental results.