论文部分内容阅读
采用直流对靶磁控溅射在Si<100>基底上沉积金属V薄膜,然后分别在纯氧气环境和纯氮气环境下进行快速热处理制备具有金属-半导体相变特性的氧化钒(VO_X)薄膜,热处理条件分别为纯氧气环境下430℃/40 s,450℃/40 s,470℃/40 s,450℃/30 s,450℃/50 s,纯氮气环境下500℃/15 s.用X射线衍射仪、X射线光电子能谱、原子力显微镜和扫描电子显微镜对薄膜的结晶结构、钒的价态和组分以及微观形貌进行分析.利用四探针薄膜电阻测量方法和THz时域频谱技术分析薄膜的电学特性和光学特性.结果表明:金属V薄膜经过纯氧气环境450℃/40 s快速热处理后形成了具有低相变特性的VO_X薄膜,升温前后薄膜方块电阻变化幅度达到两个数量级,THz透射强度变化幅度较小.为了提高薄膜的相变特性,对制备的VO_X薄膜采用纯氮气环境500℃/15 s快速热处理,薄膜的相变特性有了明显提升,相变前后方块电阻变化达到3个数量级,THz透射强度变化达到56.33%.
A metal V thin film was deposited on a Si <100> substrate by DC magnetron sputtering. Then a vanadium oxide (VO_X) thin film with metal-semiconductor phase transition was prepared by rapid thermal annealing in pure oxygen and pure nitrogen respectively. Heat treatment conditions were pure oxygen at 430 ℃ / 40 s, 450 ℃ / 40 s, 470 ℃ / 40 s, 450 ℃ / 30 s, 450 ℃ / 50 s, respectively, Ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy and scanning electron microscopy were used to analyze the crystal structure, valence and composition of vanadium, as well as the micro-morphology of the films.Using four-probe thin film resistance measurement and THz time-domain spectroscopy The electrical and optical properties of the films were analyzed.The results showed that the VO_X films with low phase transitions formed after the rapid thermal annealing of the metal V films at 450 ℃ for 40 s and the change of the sheet resistance before and after heating up to two orders of magnitude, THz transmission intensity changes in a small range.In order to improve the phase transition characteristics of the film, the prepared VO_X thin film using pure nitrogen atmosphere 500 ℃ / 15 s rapid heat treatment, the phase transition characteristics of the film has been significantly improved, before and after the phase change sheet resistance Of up to 3 orders of magnitude change in the transmitted intensity THz reached 56.33%.