ＮＴＴ公司开发了单电子元件 ,其功耗为现有同类元件的千分之一。此元件是在硅基板上用电子束刻蚀方法得到 3 0ｎｍ宽度的硅细线 ,其长度为 40ｎｍ的单电子元件。在电场作用下控制单个电子行为 ,在室温下以单电子元件来进行信号处理。目前该产品正处于基础实验阶段 ,下一步将利 NTT Corporation has developed single-electron components that consume one-thousandth the power of existing similar components. This element is obtained on the silicon substrate by electron beam etching method to obtain a silicon thin wire with a width of 30 nm and a length of 40 nm. Control of individual electronic behavior under the action of an electric field and signal processing with single electronic components at room temperature. At present, the product is in the basic experimental stage, the next step will be Lee