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用金属有机物气相外延设备 ,在氮化镓 /蓝宝石复合衬底上快速外延生长铟镓氮薄膜 ,并对其进行了 X射线三晶衍射、光致发光、反射光谱及霍尔测量等实验测试 .确定该薄膜为单晶 ,其中 In组分可以从 0增加到 0 .2 6 ;在光致激发下发光光谱为单峰 ,且峰值波长在 36 0～ 5 5 5 nm范围内可调 ;其发光机理被证实为膜内载流子经带隙跃迁而直接复合 ;并具有很高的电子浓度 .但 In Ga N薄膜的结晶质量却随着 In含量的增加而变差
In-situ epitaxial growth of indium gallium nitride thin films on GaN / sapphire substrates by metal-organic vapor phase epitaxy has been carried out and experimental tests such as X-ray diffraction, photoluminescence, reflectance spectroscopy and Hall measurement were carried out. It is confirmed that the film is a single crystal, in which the content of In can be increased from 0 to 0.226, the emission spectrum is single peak under photo-excitation, and the peak wavelength is adjustable in the range of 36 0-555 nm. The mechanism was confirmed as the direct recombination of carriers in the film by band gap transition and high electron concentration, but the crystalline quality of In Ga N thin films deteriorated with the increase of In content