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本文将描述一个具有8个冗余行和8行冗余列的256k位MOSD RAM。用备用译码器中的TaSi_2与激光束的连接来激励冗余行和列。冗余码仅占整个芯片面积的3％。
This article describes a 256k-bit MOSD RAM with eight redundant rows and eight redundant rows. Redundant rows and columns are excited by the connection of TaSi_2 to the laser beam in a spare decoder. Redundant code only accounts for 3% of the whole chip area.