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Nitrogen doping of silver oxide(AgxO) film is necessary for its application in transparent conductive film and diodes because intrinsic AgxO film is a p-type semiconductor with poor conductivity.In this work,a series of AgxO films is deposited on glass substrates by direct-current magnetron reactive sputtering at different flow ratios(FRs) of nitrogen to O2.Evolutions of the structure,the reflectivity,and the transmissivity of the film are studied by X-ray diffractometry and sphectrophotometry,respectively.The specular transmissivity and the specular reflectivity of the film decreasing with FR increasing can be attributed to the evolution of the phase structure of the film.The nitrogen does not play the role of an acceptor dopant in the film deposition.
Nitrogen doping of silver oxide (AgxO) film is necessary for its application in transparent conductive film and diodes due to intrinsic AgxO film is a p-type semiconductor with poor conductivity. In this work, a series of AgxO films is deposited on glass substrates by direct -current magnetron reactive sputtering at different flow ratios (FRs) of nitrogen to O2.Evolutions of the structure, the reflectivity, and the transmissivity of the film are studied by X-ray diffractometry and sphectrophotometry, respectively. the specular transmissivity and the specular reflectivity of the film decreasing with FR increasing can be attributed to the evolution of the phase structure of the film. nitrogen there not play the role of an acceptor dopant in the film deposition.