设计了一种采用金属支架直接导热的大功率红外发光二极管封装结构。该封装结构通过增加芯片底部金属座的厚度和尺寸,有效改善了散热性能,降低了封装热阻。实验测量表明,大功率红外发光二极管峰值波长为850nm,发光束角10°,典型输入功率为0.5W,最大输入功率可以达到2W以上,最大电光转换效率可达37.82%,最大辐射功率达到415.25mW。 A kind of high-power infrared LED package with direct heat conduction through metal bracket was designed. The package structure can effectively improve the heat dissipation performance and reduce the package thermal resistance by increasing the thickness and size of the metal seat at the bottom of the chip. The experimental measurements show that the peak power of high power infrared LED is 850nm, the beam angle is 10 °, the typical input power is 0.5W, the maximum input power can reach more than 2W, the maximum conversion efficiency reaches 37.82% and the maximum radiation power reaches 415.25mW .