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在550℃下,通过Au-Ag合金助催热蒸发氧化亚锡,制备了25nm的SnO2纳米线.测试了SnO2纳米线的室温光致发光谱,其四个发光峰中,418nm的峰是新发现的峰,它是孪晶纳米线的面缺陷造成的.SnO2纳米线的低温生长机制遵从VLS生长机制,且与SnO粉末的应用有一定的关系.SnO2纳米线的较小尺度与气相因子的低温度低浓度化学反应有关.
SnO2 nanowires were prepared by cocatalytic thermal evaporation of Au-Ag alloy at 550 ° C. The room temperature photoluminescence (PL) spectra of SnO2 nanowires were measured and the peak of 418 nm in the four luminescence peaks was new Found that it is caused by the surface defects of the twin nanowires.The mechanism of low temperature growth of SnO2 nanowires complies with the VLS growth mechanism and has a certain relationship with the application of SnO powder.The smaller size of SnO2 nanowires is related to the gas phase factor Low temperature and low concentration of chemical reaction.