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Amorphous Tin(a-Sn) film deposited by vacuum evaporation is reported and its properties are researched in this paper. X-ray diffraction for specimens prepared at lower rate of evaporation and substrate temperature demonstrates that the Sn film has amorphous structure. The temperature dependence of d.c. conductivity of the a-Sn film shows semiconductor properties the measurements of optical absorption made on each specimen, determine the optical gap. This paper interprets the experimental results in terms of theory of Anderson localization and the Mott amorphous semiconductor.
Amorphous Tin (a-Sn) film deposited by vacuum evaporation is reported and its properties are researched in this paper. X-ray diffraction for testing prepared lower rate of evaporation and substrate temperature demonstrates that the Sn film has amorphous structure. The temperature dependence of dc conductivity of the a-Sn film shows semiconductor properties the measurements of optical absorption made on each specimen, determine the optical gap. This paper interprets the experimental results in terms of theory of Anderson localization and the Mott amorphous semiconductor.