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通过对栅电流和栅电压漂移的测量 ,证明了均匀 FN应力老化后栅氧化层中陷阱呈非均匀分布 .不同厚度的栅氧化层产生 SIL C的机制不尽相同 ,薄栅以陷阱辅助隧穿为主 ,类 Pool- Frankel机制在厚二氧化硅栅中起主导作用 .
Through the measurement of gate current and gate voltage drift, it is proved that the traps in the gate oxide layer are non-uniformly distributed after the uniform FN stress aging.The mechanism of SIL C produced by gate oxide with different thicknesses is different, Based, the class Pool-Frankel mechanism plays a leading role in thick silicon dioxide gates.