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应用微波电子回旋共振化学气相沉积 (MWECRCVD)方法 ,在较高速度下沉积了α Si:H薄膜 ,用FTIR红外谱仪研究了α Si:H薄膜的结构特性随H2 /SiH4 、沉积温度和沉积速率变化关系 ,并对 2 0 0 0cm-1附近的特征吸收峰用高斯函数进行了拟合分析 ,获得了沉积高质量α Si:H薄膜的最佳工艺条件。
The α Si: H thin films were deposited at higher speed by microwave electron cyclotron resonance chemical vapor deposition (MWECRCVD). The structural properties of α Si: H thin films were investigated with FTIR spectroscopy. The relationship between the characteristic absorption peak and the rate of change was investigated. The characteristic absorption peaks near 200cm-1 were fitted by Gaussian function, and the optimum technological conditions for the deposition of high-quality α Si: H thin films were obtained.