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In this paper,we report a feasible route of growing epitaxial graphene on 4H-SiC (0001) substrate in a low pressure of 4 mbar (1 bar=10 5 Pa) with an argon flux of 2 standard liters per minute at 1200,1300,1400,and 1500℃ in a commercial chemical vapour deposition SiC reactor.Using Raman spectroscopy and scanning electron microscopy,we confirm that epitaxial graphene evidently forms on SiC surface above 1300℃ with a size of several microns.By fitting the 2D band of Raman data with two-Lorentzian function,and comparing with the published reports,we conclude that epitaxial graphene grown at 1300℃ is four-layer graphene.
In this paper, we report a feasible route of growing epitaxial graphene on 4H-SiC (0001) substrate in a low pressure of 4 mbar (1 bar = 105 Pa) with an argon flux of 2 standard liters per minute at 1200, 1300 , 1400, and 1500 ° C in a commercial chemical vapor deposition SiC reactor. Using Raman spectroscopy and scanning electron microscopy, we confirm that epitaxial graphene evidently forms on SiC surface above 1300 ° C with a size of several microns. By fitting the 2D band of Raman data with two-Lorentzian function, and comparing with the published reports, we conclude that epitaxial graphene grown at 1300 ° C is four-layer graphene.