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针对不同波段的碲镉汞红外探测器在探测高温目标情况下的特性进行了研究。测量结果显示随着所探测目标温度的不断升高,器件光生电流亦随之上升,但并非平行变化,这就导致了探测器动态微分阻抗不断下降。器件微分电阻下降的主要原因是p!n结由于背景辐照和反向偏压的增加,引起光生载流子的激增,碰撞电离导致的光电倍增效应引起的,这种效应使得器件光生电流并非是单纯叠加在器件反偏暗电流之上、只随辐射通量而变化的变量,同时也是偏压的函数,随着偏压的增大会对微分阻抗有一个降低作用。通过理论计算这种假设得到了证实,实验结果和理论计算吻合的比较好。
The characteristics of HgCdTe infrared detectors with different wavebands in detecting high temperature targets have been studied. The measurement results show that as the target temperature increases, the photocurrent of the device also increases, but it does not change in parallel, which leads to the continuous decline of the dynamic differential impedance of the detector. The main reason for the decrease of the differential resistance of the device is that the p! N junction caused by the increase of the background radiation and reverse bias causes the photo-generated carriers to proliferate and the photomultiplier effect caused by the impact ionization. This effect makes the device photo-generated current not Is simply superimposed on the device reverse bias current, only with the radiation flux changes in the variable, but also a function of bias, as the bias voltage will have a reduced impedance effect. This hypothesis is verified by theoretical calculations. The experimental results are in good agreement with the theoretical ones.