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基于铝诱导结晶化(AIC)方法,研究了不同溅射材料结构对多晶硅薄膜形成过程和材料特性的影响.首先利用射频溅射Si和直流溅射Al的方法,分别在普通玻璃衬底上沉积Si/Al/Glass,Al/Si/Glass,Si/Al/L/Si/Al/Glass三种不同结构的薄膜材料.采用相同的低温退火(500℃)工艺,对上述薄膜进行了多组时间下的退火Al诱导结晶处理.对退火处理后的样品去除表面多余Al之后进行了X射线衍射、电子显微镜表面观察和霍耳迁移率测试,分析其晶体质量特性和电学特性.结果表明,在足够长时间下,3种结构均可成功实现AIC多晶硅薄膜,其中采用多重周期性结构的薄膜结晶速度最快,并得到更优的结晶效果.
Based on the aluminum-induced crystallization (AIC) method, the effect of different sputtering materials on the formation process and material properties of polycrystalline silicon thin films was studied.Firstly, the samples were deposited on common glass substrates by RF sputtering Si and direct current sputtering Al Si / Al / Glass, Al / Si / Glass, Si / Al / L / Si / Al / Glass.All the above films were subjected to the same low temperature annealing (500 ℃) Under the annealing Al-induced crystallization.After annealing the samples to remove surface excess Al X-ray diffraction, electron microscopy and Hall mobility test, the analysis of the crystal quality and electrical properties of the results show that sufficient For a long time, AIC polycrystalline silicon thin films can be successfully implemented in all three structures, of which the film with the multiple periodic structure is the fastest in crystallization speed, and the better crystallization effect is obtained.