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A Schottky barrier diode with low-barrier is presented,based on which a terahertz waveguide detector working at500-600 GHz is designed and fabricated.By using the InGaAs/InP material system,the feature of the low barrier is obtained which greatly improves the performance of the detector.The measured typical voltage responsivity is about 900 V/W at 500-560 GHz and is about 400 V/W at 560-600 GHz.The proposed broadband waveguide detector has the characteristics of simple structure,compact size,low cost and high performance,and can be used in a variety of applications such as imaging,molecular spectroscopy and atmospheric remote sensing.
A Schottky barrier diode with low-barrier is presented, based on which a terahertz waveguide detector working at 500-600 GHz is designed and fabricated.By using the InGaAs / InP material system, the feature of the low barrier is obtained which substantial improves the performance of the detector. The measured typical voltage responsivity is about 900 V / W at 500-560 GHz and is about 400 V / W at 560-600 GHz. The proposed broadband waveguide detector has the characteristics of simple structure, compact size, low cost and high performance, and can be used in a variety of applications such as imaging, molecular spectroscopy and atmospheric remote sensing.