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选用不同浓度的Pb(Zr0·52Ti0·48)O3溶胶,用Sol-gel法在Pt/Ti/SiO2/Si基片上沉积一层厚度不同的Pb(Zr0·52Ti0·48)O3(PZT52)过渡层,经400℃烘烤、550℃退火等程序后,再用Sol-gel法在PZT52过渡层上沉积Pb(Zr0·52Ti0·48)O3薄膜.XRD分析表明,有PZT52过渡层的Pb(Zr0·52Ti0·48)O3薄膜具有(111)择优取向的钙钛矿结构,且随着过渡层厚度的增加,Pb(Zr0·52Ti0·48)O3薄膜的(111)择优取向程度越高.SEM分析表明,当PZT52过渡层的厚度达到14nm以上,Pb(Zr0·52Ti0·48)O3薄膜结晶程度得到明显改善,平均晶粒尺寸大大增加.介电、铁电性能测试表明,与没有过渡层的Pb(Zr0·52Ti0·48)O3薄膜相比,有PZT52过渡层的Pb(Zr0·52Ti0·48)O3薄膜具有较大的介电常数和剩余极化强度,而介电损耗则较小.
Pb (Zr0.52Ti0.48) O3 (PZT52) transition layer with different thickness was deposited on Pt / Ti / SiO2 / Si substrate by Sol-gel method with different concentrations of Pb , Pb (Zr0.52Ti0.48) O3 thin films were deposited on the PZT52 intercalation layer by Sol-gel method after annealing at 400 ℃ and annealing at 550 ℃ .XRD analysis showed that Pb (Zr0 · (111) preferred orientation of perovskite structure, and with the increase of the thickness of the transition layer, the (111) preferred orientation of Pb (Zr0.52Ti0.48) O3 film is higher.SEM analysis shows that , When the thickness of PZT52 transition layer is over 14nm, the crystallinity of Pb (Zr0.52Ti0.48) O3 thin film is obviously improved and the average grain size is greatly increased.The dielectric and ferroelectric properties tests show that with the Pb (Zr0.52Ti0.48) O3 thin films with PZT52 transition layer have larger dielectric constant and remanent polarization, while the dielectric loss is smaller than those of Zr0.52Ti0.48O3 thin films.