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研究了电子回旋共振等离子体技术沉积的氟化非晶碳 (a_C :F)薄膜的电学性质 .发现对于不同C_Fx 含量的薄膜 ,CC含量的增大对薄膜的导电行为具有不同的影响 .薄膜的直流I_V特性呈现I =aV +bVn规律 ,是低场强区的欧姆导电和高场强区的空间电荷限流 (SCLC)组成的导电过程 .由于非晶材料的空间电荷限流与带尾态密度的分布密切相关 ,而a_C :F薄膜中CC的含量决定带尾态密度的分布 ,因此a_C :F薄膜在高场下的空间电荷限流是由薄膜中 CC 决定的导电过程 .
The electrical properties of fluorinated amorphous carbon (a_C: F) films deposited by electron cyclotron resonance plasma technique were investigated. It was found that the increase of CC content has different effects on the conductivity of thin films with different C_Fx content. The DC current I_V exhibits a law of I = aV + bVn and is a conductive process consisting of ohmic conduction in the low field strength region and Space Charge Current Limiting (SCLC) in the high field region. Due to the space charge current limitation of the amorphous material and the band tail state The distribution of density is closely related to the distribution of a_C: F film. The content of CC in a_C: F film determines the distribution of tail density. Therefore, the space charge current limiting of a_C: F film in high field is the conduction process determined by CC in the film.