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利用激光干涉结晶方法,采用周期为400nm的一维(1D)移相光栅掩模调制KrF准分子激光器的脉冲激光束斑的能量分布,在不同厚度的超薄氢化非晶硅(a-Si:H)膜内直接制备1D有序纳米硅(nc-Si)阵列.拉曼散射谱表明,样品上呈条状分布的受辐照区域发生晶化.原子力显微镜和透射电子显微镜测试结果表明:1D的nc-Si阵列的周期和移相光栅掩模一样.随着a-Si:H膜厚度从10nm降至4nm,通过控制激光的能量密度,每个周期中nc-Si条状分布区宽度可达到30nm.nc-Si条状分布区的高分辨电子显微镜照片显示出清晰的nc-Si晶格像.
The energy distribution of the pulsed laser beam spot of a KrF excimer laser was modulated by a laser interferometric crystallization method using a one-dimensional (1D) phase-shifted grating mask with a period of 400 nm. The a-Si: H) The ordered 1D ordered nano-silicon (nc-Si) arrays were prepared by Raman scattering spectroscopy.The results of atomic force microscopy and transmission electron microscopy showed that 1D Of the nc-Si array is the same as the phase-shifted grating mask.As the a-Si: H film thickness is reduced from 10 nm to 4 nm, the width of the nc-Si stripe distribution region per cycle can be controlled by controlling the energy density of the laser High-resolution electron micrographs up to a 30 nm.nc-Si stripe distribution show clear nc-Si lattice images.