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Nucleation layer formation is a key factor for high quality gallium nitride(GaN)growth on a sapphire substrate.We found that the growth rate substantially affected the nucleation layer morphology,thereby having a great impact on the crystal quality,surface morphology and electrical properties of AlGaN/GaN heterostructures on sapphire substrates.A nucleation layer with a low growth rate of 2.5 nm/min is larger and has better coalescence than one grown at a high growth rate of 5 nm/min.AlGaN/GaN heterostructures on a nucleation layer with low growth rate have better crystal quality,surface morphology and electrical properties.
Nucleation layer formation is a key factor for high quality gallium nitride (GaN) growth on a sapphire substrate. We found that the growth rate substantially affects the nucleation layer morphology, thus having a great impact on the crystal quality, surface morphology and electrical properties AlGaN / GaN heterostructures on sapphire substrates. A nucleation layer with a low growth rate of 2.5 nm / min is larger and has better coalescence than one grown at a high growth rate of 5 nm / min. AlGaN / GaN heterostructures on a nucleation layer with low growth rate have better crystal quality, surface morphology and electrical properties.