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采用射频磁控溅射的方法制备Zn掺杂TiO2薄膜,用XRD、SEM和UV-Vis分别表征TiO2薄膜的晶体结构、表面形貌及其紫外-可见光吸收谱。并用此材料制备Au/TiO2/Au结构MSM光电导型薄膜紫外光探测器,研究其光电特性。实验结果表明,Zn掺杂TiO2紫外探测器在250nm、5V偏压紫外光照下光电流约为500μA,其响应度为100A/W,平均暗电流约为0.5μA;由于ZnO/TiO2复合薄膜之间的费米能级不同而形成的内建电场作用,减少了产生的光生电子与空穴的复合,得到较强的光电流。且其光响应的上升迟豫时间约为22s,下降响应时间约为80s;响应时间较长是由于广泛分布于薄膜中的缺陷而造成的。结果表明Zn掺杂TiO2可作为一种良好的紫外探测材料。
Zn-doped TiO2 thin films were prepared by RF magnetron sputtering. The crystal structure, surface morphology and UV-Vis absorption spectra of TiO2 thin films were characterized by XRD, SEM and UV-Vis. The Au / TiO2 / Au structured MSM photoconductive thin-film UV detector was prepared by using this material, and its photoelectric properties were studied. The experimental results show that the photocatalytic activity of Zn-doped TiO2 UV detector is about 500μA at 250nm with 5V bias UV light, its response is 100A / W and the average dark current is about 0.5μA. Since ZnO / TiO2 composite films Fermi level formed by the different built-in electric field effect, reducing the generated photogenerated electron and hole recombination, get a strong photocurrent. The rise time of light response is about 22s, and the response time is about 80s. The longer response time is due to the defects distributed widely in the film. The results show that Zn-doped TiO2 can be used as a good UV detection material.