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对比研究了20μm/0.35μm的SOI(绝缘体上硅)普通MOS和DTMOS(动态阈值MOS)的温度特性。从20~125℃,普通MOS驱动电流减小了12.2%,而DTMOS驱动电流增大了65.3%。SOI DTMOS降低了垂直沟道方向的电场,减少了载流子表面散射,因此阈值电压随温度减小占主导,驱动电流随着温度升高而增大。SOI DTMOS优秀的温度特性,使之非常适合于低压、低功耗、高温应用。
The temperature characteristics of SOI (Silicon on Insulator) common MOS and DTMOS (Dynamic Threshold MOS) of 20μm / 0.35μm were compared. From 20 to 125 ℃, the common MOS drive current decreased by 12.2%, while the DTMOS drive current increased by 65.3%. SOI DTMOS decreases the electric field in the vertical channel direction and reduces the carrier surface scattering. Therefore, the threshold voltage decreases with decreasing temperature, and the driving current increases with the increase of temperature. SOI DTMOS excellent temperature characteristics, making it ideal for low voltage, low power, high temperature applications.