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制备了基于反应溅射SiOx绝缘层的InGaZnO-TFT,并系统地研究了InGaZnO-TFT在白光照射下的稳定性,主要涉及到光照、负偏压、正偏压、光照负偏压和光照正偏压5种情况。结果表明,器件在光照和负偏压光照下的阈值偏移较大,而在正偏压光照情况下的阈值偏移几乎可以忽略。采用C-V方法证明阈值电压漂移是源于绝缘层/有源层附近及界面处的缺陷。另外,采用指数模式计算了缺陷态的弛豫时间。本研究的目的就是揭示InGaZnO-TFT在白光照射和偏压下的不稳定的原因。
The InGaZnO-TFT based on reactive sputtering SiOx insulating layer was prepared and the stability of InGaZnO-TFT under white light irradiation was systematically studied. The main factors involved were illumination, negative bias, positive bias, negative illumination bias and positive illumination Biased 5 kinds of situations. The results show that the threshold shift of the device under light and negative bias illumination is larger, while the threshold shift under the condition of positive bias illumination is almost negligible. The C-V method is used to demonstrate that the threshold voltage shift is due to defects near the insulator / active layer and at the interface. In addition, the exponential model was used to calculate the relaxation time of the defect state. The purpose of this study is to reveal the reason for the instability of InGaZnO-TFTs under white light irradiation and bias voltage.