１．１中子和电子辐照掺杂硅的正电子湮没研究范志国，勾振辉，罗起Ｔ．Ｉｗａｔａ，朱升云（日本原子能研究所）本工作采用正电子湮没方法研究了快中子和电子辐照掺硼和掺磷硅的辐照效应及其退火过程。中子辐照在掺硼硅中产生的氦气泡和退火过程中氦气的释放是当前特别感... 1.1 Positron annihilation study of neutron-doped and electron-doped silicon Fan Zhiguo, Gou Zhenhui, Luo Qitong Iwata, Zhu Shengyun (Japan Atomic Energy Research Institute) The positron annihilation method was used to study the irradiation effect and annealing process of boron-doped and phosphorus-doped silicon for fast and electron irradiation. Neutron irradiation in the boron-doped silicon helium bubbles and the release of helium during the annealing process is the current sense of special ...