1T-TaS_2是一种准二维化合物,由于电子-声子的相互作用,在温度600—180K间相继发生金属态-非公度(IC)-近公度(NC)-可公度(CC)电荷密度波态等一系列相变.相变过程中发生了电荷密度波(CDW)的形成及其调制波矢的改变.由于CDW在Fermi面处形成一能隙,构成一近似闭合的电子结构,使1T-TaS_2呈半导体电导特性和抗磁性.在准一维化合物研究中已经观察到:由于磁场与Fermi面附近的电子强烈耦合,导致Fermi面变形和新相变的出 1T-TaS_2 is a quasi-two-dimensional compound. Due to the interaction between the electron and the phonon, metal-inhomogeneous (IC) near-common ) Charge density wave form and a series of phase transitions occur during the formation of the charge density wave (CDW) and its modulation wave vector change.Due to CDW in the Fermi surface to form a band gap, constitute a nearly closed electron Structure, making 1T-TaS_2 semiconductor conductivity and anti-magnetic properties.It has been observed in quasi-one-dimensional compounds that due to the strong coupling of the magnetic field with the electrons near the Fermi surface, the Fermi surface deformation and the new phase transition