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This paper presents a single chip CMOS power amplifier with neutralization capacitors for Zigbee~(TM) system according to IEEE 802.15.4.A novel structure with digital interface is adopted,which allows the output power of a PA to be controlled by baseband signal directly,so there is no need for DAC.The neutralization capacitors will increase reverse isolation.The chip is implemented in SMIC 0.18μm CMOS technology.Measurement shows that the proposed power amplifier has a 13.5 dB power gain,3.48 dBm output power and 35.1%PAE at P_(1dB) point. The core area is 0.73×0.55 mm~2.
This paper presents a single chip CMOS power amplifier with neutralization capacitors for Zigbee ~ (TM) system according to IEEE 802.15.4.A novel structure with digital interface is adopted, which allows the output power of a PA to be controlled by baseband signal directly , so there is no need for DAC. The neutralization capacitors will increase reverse isolation. The chip is implemented in SMIC 0.18 μm CMOS technology. Measurement shows that the proposed power amplifier has a 13.5 dB power gain, 3.48 dBm output power and 35.1% PAE at P_ (1dB) point. The core area is 0.73 × 0.55 mm ~ 2.