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本文研究了不同沉积氛围(纯Ar,Ar+O2和Ar+N2)中射频磁控溅射制备HfO2薄膜的介电性能和界面微结构.实验结果表明在纯Ar氛围室温制备的HfO2薄膜具有较好的电学性能(有效介电常数ε-r～17.7;平带电压～0.36 V;1 V栅电压下的漏电流密度～4.15×10-3 A cm-2).高分辨透射电子显微镜观测和X射线光电子能谱深度剖析表明,在非晶HfO2薄膜和Si衬底之间生成了非化学配比的HfSixOy和HfSix混合界面层.该界面层的出现降低了薄膜的有效介电常数,而界面层中的电荷捕获陷阱则导致薄膜电容-电压曲线出现顺时针的回线.
In this paper, the dielectric properties and interfacial microstructure of HfO2 films prepared by RF magnetron sputtering in different deposition atmospheres (pure Ar, Ar + O2 and Ar + N2) were investigated.The experimental results show that the HfO2 films prepared at room temperature Good electrical properties (effective dielectric constant ε-r ~ 17.7; flat band voltage ~ 0.36 V; leakage current density ~ 4.15 × 10 -3 A cm-2 at 1 V gate voltage). High-resolution transmission electron microscopy observations and X-ray photoelectron spectroscopy depth analysis showed that a non-stoichiometric HfSixOy and HfSix mixed interfacial layer was formed between the amorphous HfO2 thin film and the Si substrate.The appearance of the interfacial layer reduced the effective dielectric constant of the film, while the interface Charge trap traps in the layer result in a clockwise loop back in the capacitor’s capacitance-voltage curve.