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结合Al/Al2 O3 /Au结构MIM(metal/insulator/metal)隧道结I U特性、深度Auger谱及结发光后结面透明度的测试与观察 ,对其发光衰减机制进行了研究。结果表明 ,由于MIM结工作时 ,通过隧道电流等产生的大量焦耳热引起底电极Al膜不断氧化 ,中间栅Al2 O3 的厚度不断增加 ,从而使得隧穿电子激发表面等离极化激元 (surfaceplasmonpolariton ,SPP)的强度不断变弱 ,引起SPP耦合发光的强度不断衰减
The mechanism of luminescence decay was studied by testing and observing the I U characteristics of Au / Al 2 O 3 / Au tunnel junction, the depth Auger spectrum and the junction transparency of the junction and luminescence. The results show that due to the large amount of Joule heat caused by tunneling current and other reasons, the thickness of Al 2 O 3 in the middle gate increases continuously due to the large amount of Joule heat generated by the tunneling current and the like, so that the tunneling electron excited surface plasmon polariton , SPP) continue to weaken the intensity, causing SPP coupled light intensity decay