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In_(0.53)Ga_(0.47)As作为磷化铟(InP)晶格匹配良好的三元材料,在长波长(0.9～1.6μm)光接收机中的应用已被完全确认。在高速光探测方面,文献中已经报道了多种类型的探测器,如肖特基光电二极管、光敏电阻和PIN光电二极管。虽然象100GHzGaAs肖特基二极管这样的极高速光探测器已经有所报道,但是由于InGaAs材料的禁带宽度窄,表面态密度高,因此难以用它制备出可靠的肖特基势垒器件。光敏电阻虽显示出数十皮秒(10~(-12)秒)的高速上升时间,并且具有大光电导增益所需要的势能,然而其缺点是
The application of In_ (0.53) Ga_ (0.47) As as the ternary material with good lattice matching for indium phosphide (InP) has been fully confirmed in the long wavelength (0.9 ~ 1.6μm) optical receiver. In the field of high-speed photodetection, various types of detectors have been reported in the literature, such as Schottky photodiodes, photoresistors and PIN photodiodes. Although very high-speed photodetectors such as 100 GHz GaAs Schottky diodes have been reported, the InGaAs materials are difficult to fabricate reliable Schottky barrier devices due to their narrow bandgap and high surface-state density. Although the photoresistor shows high-speed rise times of tens of picoseconds (10 to -12 seconds) and has the potential energy required for large photoconductive gain, the disadvantage is that