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Ordered GeSi nanowires with a ～10nm cross section are fabricated utilizing top-down and Ge condensation techniques.In transmission electron microscopy measurements,the obtained GeSi nanowires exhibit a singlecrystal structure and a smooth Ge/SiO2 interface.Due to the linear relationship between the cross-section area and the initial patte size under the self-limited oxidation condition,the cross-section size of GeSi nanowires can be precisely controlled.The Raman spectra reveal a high Ge fraction (up to 97％) and a biaxial strain of the GeSi nanowires.This top-down technique is promising for fabrication of high-performance GeSi nanowire based optoelectronic devices.