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在分析电离辐射引起场区隔离失效机理及场区电离辐射加固技术的基础上，开发了一套适用于研制辐射加固５４ＨＣ系列和辐射加固大规模集成电路的ＣＭＯＳ工艺技术。辐射实验结果表明，该技术可比非加固电路的抗总剂量辐射能力提高两个数量级。
Based on the analysis of the ionospheric radiation failure mechanism and field ionizing radiation reinforcement technology, a CMOS technology suitable for the development of radiation-hardened 54HC series and radiation-hardened LSIs has been developed. Radiation experiment results show that this technique can enhance the total dose radiation resistance of non-reinforced circuit by two orders of magnitude.