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本文利用[111]取向的硅单晶试样产生出选区电子通道花样,对JSM-35C扫描电镜的等效投影距离(R)-工作距离(D)关系曲线进行了测定;找出了在加速电压为30kV、20kV下的R-D工作曲线,进而利用SACP_S测定了退火A1单晶的取向,其结果与其它方法测量值一致。
In this paper, the electron-channel patterns of the selected area were produced by [111] -oriented silicon single crystal samples and the equivalent projection distance (R) -working distance (D) curve of JSM-35C SEM was measured. The voltage is 30kV, 20kV RD working curve, and then use the SACP_S measured annealing A1 single crystal orientation, the results of measurements consistent with other methods.