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本文应用高分辨率多重晶多次反射Ｘ射线衍射仪（Ｈｉｇｈ－ＲｅｓｏｌｕｔｉｏｎＭｕｌｔｉｐｌｅ－ＣｒｙｓｔａｌＭｕｌｔｉｐｌｅ－ＲｅｆｌｅｃｔｉｏｎＤｉｆｒａｃｔｏｍｅｔｅｒ，ＨＲＭＣＭＲＤ）研究了粘接后的ＧａＡｓ／ＧａＡｌＡｓ／玻璃结构．利用倒易空间衍射图的方法评价粘接后的晶体质量，给出了倒易空间衍射的三维强度分布图．结果表明，粘接过程中较大的应力将使应变的非四方畸变加剧，同时生长方向的应变产生较大的变化．这都将在晶体内部产生缺陷，影响器件的光电特性．成功的粘接样品表明，应变造成摇摆曲线的半峰宽（ＦＷＨＭ）约７０″，沿晶体生长方向的应变变化较小，并且倒易空间衍射强度分布峰形对称
In this paper, the bonded GaAs / GaAlAs / glass structures were studied by using High-Resolution Multi-Crystal Multiple-Reflection Diffraction (HRMCMRD). The quality of the bonded crystal was evaluated by the method of reciprocal space diffraction and the three-dimensional intensity distribution of the diffraction in reciprocal space was given. The results show that the larger stress in the bonding process will aggravate the non-quadrilateral distortion of the strain and the larger the strain in the growth direction. This will create defects inside the crystal, affecting the optoelectronic properties of the device. Successful bonding samples showed that the strain caused a rocking curve full width at half maximum (FWHM) of about 70 ", small strain changes along the crystal growth direction, and reciprocal space diffraction intensity distribution peak shape symmetry