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NOR和NAND是现在市场上两种主要的非易失闪存技术。Intel于1988年首先开发出NOR flash技术,彻底改变了原先由EPROM和EEPROM一统天下的局面。紧接着,1989年,东芝公司发表了NAND flash结构,强调降低每比特的成本,更高的性能,并且象磁盘一样可以通过接口轻松升级。但是经过了十多年之后,仍然有相当多的硬件工程师分不清NOR和NAND闪存。 相“flash存储器”经常可以与相“NOR存储器”互换使用。许多业内人士也搞不清楚NAND闪存技术相对于NOR技术的优越之处,因为大多数情况下闪存只是用来存储少量的代码,这时NOR闪存更适合一些。而NAND则是高数据存储密度的理想解决方案。
NOR and NAND are the two main non-volatile flash technologies on the market today. Intel first developed NOR flash technology in 1988, completely changed the original situation dominated by the EPROM and EEPROM. Then, in 1989, Toshiba announced the NAND flash structure, emphasizing lower cost per bit, higher performance, and disk-like interface can be easily upgraded. However, after more than a decade, there are still quite a few hardware engineers who can not tell NOR and NAND flash memory. The phase “flash memory” can often be used interchangeably with the phase “NOR memory”. Many industry insiders are also confused about the superiority of NAND flash technology over NOR technology because most flash memory is only used to store a small amount of code, and NOR flash memory is more suitable. NAND is the ideal solution for high data storage densities.