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针对光探测器在倒装焊过程中频响性能恶化的问题,建立等效电路模型分析出其原因,并通过优化倒装焊工艺条件予以有效解决。该电路模型包括探测器芯片、过渡热沉和倒装焊环节三个部分。基于倒装焊后探测器的S11参数和频响曲线提取出倒装焊环节特征参数,确认焊点接触电阻过大是引起探测器频响下降的主要原因。通过优化倒装焊工艺条件,有效减小了焊点接触电阻,基本消除了倒装焊对探测器频响特性的影响。
Aiming at the problem that the photodetector deteriorates the frequency response performance during the flip-chip bonding process, an equivalent circuit model is established to analyze the reason and optimize the flip-chip process conditions to effectively solve the problem. The circuit model includes the detector chip, transition heat sink and flip-chip links three parts. Based on the S11 parameters and the frequency response curve of the flip-chip detector, the characteristic parameters of the flip-chip assembly were extracted. It was confirmed that the contact resistance of the solder joint was too large, which was the main reason for the decrease of the detector frequency response. By optimizing the flip-chip process conditions, the solder joint contact resistance is effectively reduced, and the influence of flip-chip welding on the frequency response characteristics of the detector is basically eliminated.