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采用OMA - 4 0 0 0测量了SiH4射频辉光放电等离子体的光发射谱 ,研究了其谱线强度随放电射频功率和反应气体流量间的变化关系。发现在放电射频功率增加和反应气体流量升高的过程中 ,其等离子体状态分别发生性质不同的转变 ,这种转变联系到射频功率耗散机制的变化。当反应气体流量增加时 ,电子获得能量的机制由阴极暗区加速转变为等离子体内电场的加热效应 ;而在放电功率升高的过程中 ,离子轰击阴极产生二次电子发射效应导致了光发射谱强度急剧增强的转变。
The optical emission spectrum of SiH4 RF glow discharge plasma was measured by OMA - 4000, and the relationship between the intensity of the emission and RF power and reactant gas flow rate was studied. It is found that during the process of increasing radio frequency power and reaction gas flow rate, plasma states change in different states, which is related to the change of RF power dissipation mechanism. When the reactant gas flow rate increases, the electron energy gain mechanism changes from dark cathode region to plasma electric field heating effect; and in the discharge power increases, the ion bombardment cathode produces secondary electron emission effect led to the light emission spectrum The sharp increase in intensity.